BUZ900 BUZ901 N–CHANNEL POWER MOSFET

BUZ900
BUZ901
MAGNA
TEC
MECHANICAL DATA
Dimensions in mm
+0.1
-0.15
8.7 Max.
1
1.50
Typ.
Ø 20 M ax.
16.9 ± 0.15
39.0 ± 1.1
30.2 ± 0.15
10.90 ± 0.1
2
11.60
± 0.3
Ø 1.0
25.0
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
R 4.0 ± 0.1
R 4.4 ± 0.2
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
TO–3
Pin 1 – Gate
Pin 2 – Drain
Case – Source
• P–CHANNEL ALSO AVAILABLE AS
BUZ905 & BUZ906
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
BUZ900
160V
BUZ901
200V
VGSS
Gate – Source Voltage
ID
Continuous Drain Current
8A
ID(PK)
Body Drain Diode
8A
PD
Total Power Dissipation
Tstg
Storage Temperature Range
Tj
Maximum Operating Junction Temperature
150°C
RθJC
Thermal Resistance Junction – Case
1°C/W
Magnatec.
±14V
@ Tcase = 25°C
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
125W
–55 to 150°C
Prelim. 10/94
BUZ900
BUZ901
MAGNA
TEC
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Min.
VGS = –10V
BUZ900
160
ID = 10mA
BUZ901
200
Gate – Source Breakdown Voltage
VDS = 0
IG = ±100µA
±14
VGS(OFF)
Gate – Source Cut–Off Voltage
VDS = 10V
ID = 100mA
0.15
VDS(SAT)*
Drain – Source Saturation Voltage
VGD = 0
ID = 8A
BVDSX
Drain – Source Breakdown Voltage
BVGSS
Typ.
Drain – Source Cut–Off Current
VGS = –10V
V
VDS = 10V
Forward Transfer Admittance
1.5
V
12
V
10
BUZ900
mA
VDS = 200V
10
BUZ901
yfs*
Unit
V
VDS = 160V
IDSX
Max.
ID = 3A
0.7
2
S
Max.
Unit
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Min.
Typ.
Ciss
Input Capacitance
500
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn–on Time
VDS = 20V
100
toff
Turn-off Time
ID = 5A
50
VDS = 10V
300
f = 1MHz
pF
10
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
Derating Chart
150
CH AN NE L D ISS IP ATION (W )
125
100
75
50
25
0
0
25
50
75
100
125
150
TC — CASE TEMPERATURE (˚C)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900
BUZ901
MAGNA
TEC
Typical Output Characteristics
9
6V
8
8
TC = 25˚C
TC = 75˚C
7
5V
6
5
4V
=
P CH
4
12
3
5W
3V
2
6V
6
5V
5
4
4V
=
P CH
I D — D R AIN C U RR EN T (A)
7
I D — D R AIN C U RR EN T (A)
Typical Output Characteristics
9
12
5W
3
3V
2
2V
1
1
0
2V
0
0
10
20
30
40
50
60
70
80
90
0
10
V DS — DRAIN – SOURCE VOLTAGE (V)
30
40
50
60
70
80
90
V DS — DRAIN – SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
10
20
Transconductance
100
V DS = 20V
TC = 25˚C
ER
AT
IO
G FS — TR AN SC ON DU C TAN CE (S)
OP
N
1
0.1
BUZ901
0.01
1
10
200V
BUZ900
160V
I D — D R AIN C U RR EN T (A)
DC
10
TC = 25˚C
TC = 75˚C
1
0.1
100
1000
0
1
2
V DS — DRAIN – SOURCE VOLTAGE (V)
3
4
5
6
7
8
I D — DRAIN CURRENT (A)
Drain – Source Voltage
vs
Gate – Source Voltage
10
TC = 25˚C
V DS = 10V
8
TC = 25˚C
8
7
I D — D R AIN C UR R EN T (A)
V DS — DR AIN – S OU RC E V OLTAGE (V )
Typical Transfer Characteristics
9
6
I D = 6A
4
I D = 3A
TC = 75˚C
6
TC = 100˚C
5
4
3
2
2
I D = 1A
1
0
0
0
2
4
6
8
10
12
14
0
V GS — GATE – SOURCE VOLTAGE (V)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
1
2
3
4
5
6
7
8
V GS — GATE – SOURCE VOLTAGE (V)
Prelim. 10/94