IRL2203N - Rcl

PD - 9.1366C
IRL2203N
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
l
D
l
VDSS = 30V
RDS(on) = 0.007Ω
G
ID = 116A…
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
116…
82
400
170
1.1
±16
390
60
17
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.90
–––
62
°C/W
8/25/97
IRL2203N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
Min.
30
–––
–––
–––
1.0
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
210
29
54
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.007
VGS = 10V, ID = 60A „
Ω
0.01
VGS = 4.5V, I D = 50A „
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 60A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
110
ID = 60A
31
nC VDS = 24V
57
VGS = 4.5V, See Fig. 6 and 13 „
–––
VDD = 15V
–––
I D = 60A
ns
–––
RG = 1.8Ω, VGS = 4.5V
–––
RD = 0.25Ω, See Fig. 10 „
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
––– 3500 –––
VGS = 0V
––– 1400 –––
pF
VDS = 25V
––– 690 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 116…
showing the
A
G
integral reverse
––– ––– 400
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 60A, VGS = 0V „
––– 94 140
ns
TJ = 25°C, IF = 60A
––– 280 410
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 60A. (See Figure 12)
ƒ ISD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRL2203N
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
TOP
ID , D ra in -to -S o u rc e C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
100
10
2.5 V
2 0µ s PU L SE W ID TH
T J = 2 5°C
1
0.1
1
10
100
2.5 V
10
20 µ s PU LSE W ID TH
T J = 1 75°C
1
A
100
0.1
1
V D S , Drain-to-S ource Voltage (V )
Fig 2. Typical Output Characteristics
2.0
R DS (on ) , Drain-to-S ource O n Resistance
( Norm alized)
I D , D rain -to- S ou rce C ur ren t (A )
1000
T J = 2 5 °C
T J = 1 75 °C
10
V DS = 1 5 V
2 0 µ s P U L SE W ID TH
1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
100
10
9.0
A
I D = 1 00A
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction Tem perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2203N
V GS
C iss
C rs s
C os s
C , C a p a c ita n c e (p F )
6000
=
=
=
=
15
0V ,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G ate-to-Source V oltage ( V)
8000
V D S = 24 V
V D S = 15 V
12
C is s
C os s
4000
C rs s
2000
0
10
9
6
3
FOR TE ST CIR C UIT
SEE FIGU RE 1 3
0
A
1
I D = 60A
100
A
0
V D S , D rain-to-S ource Voltage (V )
60
90
120
150
Q G , T otal G ate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
O PER ATIO N IN TH IS AR EA L IM ITED
BY R DS (o n)
10 µs
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
30
TJ = 2 5°C
TJ = 1 75 °C
100
VG S = 0 V
10
0.5
1.0
1.5
2.0
2.5
3.0
V S D , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.5
100
10 0µs
1m s
10
10m s
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL2203N
120
100
I D , Drain Current (A)
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
- VDD
80
4.5V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
T C , Case Temperature
150
175
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response
(Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRL2203N
15 V
D R IV E R
L
VD S
D .U .T
RG
+
V
- DD
IA S
10V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
1000
TO P
600
400
200
0
V (BR )D SS
BO TTOM
800
ID
2 4A
42A
60 A
V D D = 1 5V
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
4.5 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRL2203N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL2203N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
M
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E XPLE
AM PLE
N 1010
IRF 1010
E X AM
: T:HI TSHIISS AISN AIRF
S ELY
MB LY
W ITWH ITAHS SAESMB
T DE
CO DE
9B 1M
LO TLOCO
9B 1M
A
INRTE
T ION
IN TE
NARTNA
ION
AL AL
T IF IER
R ECRTEC
IF IER
F 1010
IR F IR
1010
LO GO
LO GO
9246
9246
9B 9B1M 1M
S SBEM
A S SAEM
LYB LY
LO
T
CO DE
LO T CO DE
A
P A RT
NU
P A RT
NU M
BEMRBE R
D A TE
D A TE
C ODCEOD E
(Y
YW
(Y YW W ) W )
= AYE
Y Y Y=Y YE
R AR
W WW =W W= EW
EKE EK
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Data and specifications subject to change without notice.
8/97