SGH80N60UFD

SGH80N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
High input impedance
CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
E
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGH80N60UFD
600
± 20
80
40
220
25
280
195
78
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
----
Max.
0.64
0.83
40
Units
°C/W
°C/W
°C/W
SGH80N60UFD Rev. B1
SGH80N60UFD
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
3.5
---
4.5
2.1
2.6
6.5
2.6
--
V
V
V
----
2790
350
100
----
pF
pF
pF
-------------------
23
50
90
50
570
590
1160
30
55
150
160
630
940
1580
175
25
60
14
--130
150
--1500
--200
250
--2000
250
40
90
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Min.
--
Typ.
1.4
Max.
1.7
Units
--
1.3
--
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 40mA, VCE = VGE
IC = 40A, VGE = 15V
IC = 80A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 40A,
VGE = 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©2002 Fairchild Semiconductor Corporation
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 25A
TC = 100°C
IF = 25A,
di/dt = 200A/us
TC = 25°C
--
50
95
TC = 100°C
--
105
--
TC = 25°C
--
4.5
10
TC = 100°C
--
8.5
--
TC = 25°C
--
112
375
TC = 100°C
--
420
--
V
ns
A
nC
SGH80N60UFD Rev. B1
SGH80N60UFD
Electrical Characteristics of the IGBT T
120
Common Emitter
T C = 25℃
20V
12V
100
Collector Current, IC [A]
Collector Current, I C [A]
Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
15V
200
VGE = 10V
150
100
50
80
60
40
20
0
0
0
2
4
6
8
0.5
Collector - Emitter Voltage, V CE [V]
1
10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
60
4
Common Emitter
VGE = 15V
V CC = 300V
Load Current : peak of square wave
50
80A
3
Load Current [A]
Collector - Emitter Voltage, VCE [V]
SGH80N60UFD
250
40A
2
IC = 20A
40
30
20
1
10
Duty cycle : 50%
TC = 100℃
Power Dissipation = 60W
0
0
0
30
60
90
120
0.1
150
1
Case Temperature, T C [℃]
10
100
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 25℃
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
1000
Frequency [Khz]
16
12
8
80A
4
40A
IC = 20A
0
16
12
8
80A
4
40A
IC = 20A
0
0
4
8
12
16
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGH80N60UFD Rev. B1
500
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
4000
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 40A
T C = 25℃
T C = 125℃
Cies
3000
Switching Time [ns]
Capacitance [pF]
3500
2500
2000
1500
Coes
Ton
Tr
100
1000
Cres
500
0
20
1
10
30
1
10
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
5000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 40A
TC = 25℃
TC = 125℃
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 40A
T C = 25℃
T C = 125℃
Toff
Switching Loss [uJ]
Switching Time [ns]
1000
Tf
100
Tf
Eoff
Eon
1000
Eoff
100
20
1
10
80
1
10
Gate Resistance, R G [Ω ]
80
Gate Resistance, R G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
500
2000
Common Emitter
VCC = 300V, V GE = ± 15V
RG = 5Ω
TC = 25℃
TC = 125℃
1000
Switching Time [ns]
Switching Time [ns]
70
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, V CE [V]
100
Ton
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 5Ω
T C = 25℃
T C = 125℃
Toff
Tf
Toff
100
Tf
Tr
10
20
10
20
30
40
50
60
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
70
80
10
20
30
40
50
60
70
80
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH80N60UFD Rev. B1
SGH80N60UFD
4500
Gate - Emitter Voltage, VGE [ V ]
1000
Switching Loss [uJ]
SGH80N60UFD
15
3000
Eoff
100
Common Emitter
V CC = 300V, V GE = ± 15V
RG = 5Ω
T C = 25℃
T C = 125℃
Eon
Common Emitter
RL = 7.5 Ω
TC = 25℃
12
9
300 V
6
V CC = 100 V
200 V
3
10
0
0
10
20
30
40
50
60
70
80
0
30
Collector Current, IC [A]
60
90
120
150
180
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
500
IC MAX. (Pulsed)
50us
IC MAX. (Continuous)
Collector Current, I C [A]
Collector Current, IC [A]
100
100us
1㎳
10
DC Operation
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
1
0.1
0.3
100
10
Safe Operating Area
o
V GE =20V, TC=100 C
1
10
100
1
1000
1
10
Collector-Emitter Voltage, VCE [V]
100
1000
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
Thermal Response, Zthjc [℃/W]
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Pdm
t1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
10
-5
10
-4
10
-3
-2
10
-1
10
0
10
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
Reverse Recovery Current, Irr [A]
Forward Current, I F [A]
100
10
1
0
1
2
V R = 200V
IF = 25A
T C = 25℃
T C = 100℃
10
1
100
3
Forward Voltage Drop, VF [V]
1000
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
120
1000
800
V R = 200V
IF = 25A
T C = 25℃
T C = 100℃
Reverce Recovery Time, t rr [ns]
Stored Recovery Charge, Qrr [nC]
SGH80N60UFD
100
TC = 25℃
TC = 100℃
600
400
200
0
VR = 200V
IF = 25A
TC = 25℃
TC = 100℃
100
80
60
40
20
100
1000
di/dt [A/us]
Fig 20. Stored Charge
©2002 Fairchild Semiconductor Corporation
100
1000
di/dt [A/us]
Fig 21. Reverse Recovery Time
SGH80N60UFD Rev. B1
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
SGH80N60UFD
Package Dimension
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1